| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | uDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 500 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 885pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 47 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.4 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMA6023PZT is a dual P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. It is suitable for use with battery protection, battery management and load switch applications.
● Low profile
● Halogen-free
● ±8V Gate to source voltage
● -3.6A Continuous drain current
● -15A Pulsed drain current
ON Semiconductor
7 Pages / 0.35 MByte
ON Semiconductor
13 Pages / 1.45 MByte
ON Semiconductor
9 Pages / 1.17 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDMA6023PZT Dual MOSFET, Dual P Channel, -3.6A, -20V, 0.04Ω, -4.5V, -500mV
ON Semiconductor
Dual P-Channel PowerTrench® MOSFET -20V, -3.6A, 60mΩ, 3000-REEL
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