| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-33 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | P-Channel |
| Power Dissipation | 31 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 8.5A |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 2045pF @15V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.3W (Ta), 31W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMC4435BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 100% UIL tested
● >7kV Typical HBM ESD protection level
Fairchild
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