| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | DFN-3 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0107 Ω |
| Power Dissipation | 36 W |
| Threshold Voltage | 1.9 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 2154pF @15V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 36 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 0.75 mm |
The FDMC6675BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 8kV Typical HBM ESD protection level
ON Semiconductor
7 Pages / 0.3 MByte
Fairchild
Trans MOSFET P-CH 30V 9.5A 8Pin MLP EP T/R
ON Semiconductor
MOSFET P-CH 30V 9.5A POWER33
Fairchild
MOSFET -30V P-CH PwrTrench
Fairchild
MOSFET -30V P-CH PwrTrench
Fairchild
MOSFET -30V P-CH PwrTrench
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
