| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-33-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | N-Channel |
| Power Dissipation | 41 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 7A |
| Rise Time | 2.3 ns |
| Input Capacitance (Ciss) | 1290pF @50V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 2.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMC86102LZ is a N-channel Logic Level MOSFETs produced using Fairchild Semiconductor"s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance. G-S Zener has been added to enhance ESD voltage level.
● 100% UIL tested
● >6kV Typical HBM ESD protection level
Fairchild
7 Pages / 0.37 MByte
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