| TYPE | DESCRIPTION |
|---|
| Number of Pins | 12 Pin |
| Case/Package | QFN |
| Number of Positions | 12 Position |
| Drain to Source Resistance (on) (Rds) | 0.085 Ω |
| Power Dissipation | 22 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ |
The FDMQ8203 is a 100V Dual N-channel and Dual P-channel PowerTrench® MOSFET, GreenBridge™ series of high-efficiency bridge rectifiers provides ten-fold improvement in power dissipation over diode bridge. Used in bridge rectifier applications. Specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.
ON Semiconductor
10 Pages / 0.37 MByte
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