| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-56-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0013 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 13A/30A |
| Input Capacitance (Ciss) | 1765pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 5.9 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMS3660S is a dual N-channel Asymmetric MOSFET suitable for use with computing, general purpose point of load and notebook VCORE applications. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
● Low inductance packaging shortens rise/fall times, resulting in lower switching losses
● MOSFET integration enables optimum layout (lower circuit inductance & reduced switch node ringing)
Fairchild
16 Pages / 0.63 MByte
Fairchild
18 Pages / 0.65 MByte
Fairchild
4 Pages / 0.17 MByte
Fairchild
Trans MOSFET N-CH 30V 13A/30A 8Pin Power 56 T/R
ON Semiconductor
Trans MOSFET N-CH 30V 13A/30A 8Pin Power 56 T/R
ON Semiconductor
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V, 3000-REEL
Fairchild
Trans MOSFET N-CH 30V 13A/30A 8Pin Power 56 T/R
Fairchild
Trans MOSFET N-CH 30V 13A/30A 8Pin Power 56 T/R
ON Semiconductor
MOSFET 2N-CH 30V 13A/30A 8-PQFN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
