TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | QFN-56 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0052 Ω |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.8 V |
Input Capacitance | 4444 pF |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 28 ns |
Input Capacitance (Ciss) | 4444pF @15V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 79 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 73 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5 mm |
Size-Width | 6 mm |
Size-Height | 1.05 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
● MSL1 robust package design
● 8kV Typical HBM ESD protection level
ON Semiconductor
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ON Semiconductor
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FAIRCHILD SEMICONDUCTOR FDMS6673BZ MOSFET Transistor, P Channel, -28A, -30V, 0.0052Ω, -10V, -1.8V
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