FDMS7672 Datasheet PDF - Fairchild

General Description

●This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters  using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

●Features

●Max rDS(on)= 5.0 mΩ at VGS= 10 V, ID= 19 A

●Max rDS(on)= 6.9 mΩ at VGS= 4.5 V, ID= 15 A

●Advanced Package and Silicon design for low rDS(on) and high efficiency

●Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications

●MSL1 robust package design

●100% UIL tested

●RoHS Compliant

●Applications

●IMVP Vcore Switching for Notebook

●VRM Vcore Switching for Desktop and Server

●OringFET / Load Switch

●DC-DC Conversion