FDMS86180 Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Case Package:	QFN
Description:	Trans MOSFET N-CH 100V 21A 8Pin PQFN EP T/R
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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FDMS86180 Specifications

TYPE	DESCRIPTION
Number of Pins	8 Pin
Case/Package	QFN
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0024 Ω
Power Dissipation	138 W
Threshold Voltage	3.2 V
Drain to Source Voltage (Vds)	100 V
Rise Time	12 ns
Input Capacitance (Ciss)	4439pF @50V(Vds)
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2700 mW

TYPE	DESCRIPTION
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)

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