| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -2.60 A |
| Case/Package | SOT-23-3 |
| Power Rating | 500 mW |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.03 Ω |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Input Capacitance | 454 pF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 2.60 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 1138pF @6V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
● Fast switching
● High performance trench technology for extremely low RDS
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