| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.07 Ω |
| Power Dissipation | 0.5 W |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 8.5 ns |
| Input Capacitance (Ciss) | 310pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
● Low gate threshold voltage
● High performance trench technology for extremely low RDS
● High power and current handling capability
ON Semiconductor
7 Pages / 0.18 MByte
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.6 MByte
Fairchild
N-Channel 2.5V Specified PowerTrenchTM MOSFET
Fairchild
N-Channel 2.5V Specified PowerTrenchTM MOSFET, N채널 20V, 1.7A, 0.07Ω, SSOT-3
ON Semiconductor
MOSFET N-CH 20V 1.7A SSOT3
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