| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 1.70 A |
| Case/Package | SOT-23-3 |
| Power Rating | 500 mW |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 900 mV |
| Input Capacitance | 40.0 pF |
| Gate Charge | 3.50 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | -60.0 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 1.70 A |
| Rise Time | 8.5 ns |
| Input Capacitance (Ciss) | 310pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
● Low gate threshold voltage
● High performance trench technology for extremely low RDS
● High power and current handling capability
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