TYPE | DESCRIPTION |
---|
Case/Package | SSOT-3 |
Drain to Source Resistance (on) (Rds) | 70.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | ±8.00 V |
Continuous Drain Current (Ids) | 1.70 A |
Rise Time | 8.5 ns |
Fall Time | 8.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.4 mm |
Size-Height | 1.12 mm |
Fairchild
5 Pages / 0.07 MByte
Fairchild
N-Channel 2.5V Specified PowerTrenchTM MOSFET
Fairchild
N-Channel 2.5V Specified PowerTrenchTM MOSFET, N채널 20V, 1.7A, 0.07Ω, SSOT-3
ON Semiconductor
MOSFET N-CH 20V 1.7A SSOT3
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