FDN338 Datasheet PDF - Fairchild

General Description

●This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

●Features

●· –1.6 A, –20 V. RDS(ON) = 115 mW @ VGS = –4.5 V

●                     RDS(ON) = 155 mW @ VGS = –2.5 V

●· Fast switching speed

●· High performance trench technology for extremely low RDS(ON)

●· SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

●Applications

●· Battery management

●· Load switch

●· Battery protection