| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -2.00 A |
| Case/Package | SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 0.062 Ω |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1.05 V |
| Input Capacitance | 635 pF |
| Gate Charge | 6.30 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 635pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDN342P is a 2.5V specified P-channel MOSFET produced using rugged gate version of Fairchild Semiconductor"s advanced PowerTrench® process. It has been optimized for load switch and battery protection applications requiring a wide range of gate drive voltage ratings (2.5 to 12V).
● High performance Trench technology for extremely low RDS (ON)
Fairchild
5 Pages / 0.13 MByte
Fairchild
10 Pages / 0.86 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDN342P MOSFET Transistor, P Channel, 2A, -20V, 0.062Ω, -4.5V, 1.05V
ON Semiconductor
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Fairchild
P-Channel 2.5V Specified PowerTrench MOSFET
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