| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 1.90 A |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.053 Ω |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1.6 V |
| Input Capacitance | 235 pF |
| Gate Charge | 4.20 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 1.90 A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 235pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount-package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
● High density cell design for extremely low RDS (ON)
● Exceptional ON-resistance and maximum DC current capability
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5 Pages / 0.08 MByte
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FAIRCHILD SEMICONDUCTOR FDN357N MOSFET Transistor, N Channel, 1.9A, 30V, 0.053Ω, 4.5V, 1.6V
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