TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 46 mΩ |
Power Dissipation | 500 mW |
Threshold Voltage | 1.6 V |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 13 ns |
Input Capacitance (Ciss) | 480pF @10V(Vds) |
Input Power (Max) | 460 mW |
Fall Time | 4 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 2.92 mm |
Size-Width | 1.4 mm |
Size-Height | 0.94 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Very fast switching
● Low gate charge
ON Semiconductor
6 Pages / 0.26 MByte
ON Semiconductor
7 Pages / 0.2 MByte
ON Semiconductor
9 Pages / 0.6 MByte
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