| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Power Dissipation | 0.5 W |
| Threshold Voltage | 1.9 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 298pF @15V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
The FDN360P is a single P-channel Logic Level MOSFET produced using Fairchild"s Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It comes with high performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● High performance Trench technology for extremely low RDS (ON)
● 6.2nC Typical low gate charge
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