TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 2.60 A |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 40 mΩ |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Threshold Voltage | 1.4 V |
Input Capacitance | 630 pF |
Gate Charge | 5.80 nC |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Breakdown Voltage (Gate to Source) | ±16.0 V |
Continuous Drain Current (Ids) | 2.60 A |
Rise Time | 5.00 ns |
Input Capacitance (Ciss) | 630pF @15V(Vds) |
Input Power (Max) | 460 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on)and ow gate harge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON)
Fairchild
5 Pages / 0.13 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
MOSFET N-CH 30V 2.6A SSOT-3
ON Semiconductor
MOSFET N-CH 30V 2.6A SSOT-3
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