| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.17 Ω |
| Power Dissipation | 0.5 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 430pF @30V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDN5618P is a 60V P-channel MOSFET uses Fairchild"s high voltage PowerTrench® process. It has been optimized for load switch and DC-to-DC converters applications.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
ON Semiconductor
5 Pages / 0.2 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.04 MByte
ON Semiconductor
9 Pages / 0.6 MByte
ON Semiconductor
1 Pages / 0.15 MByte
Fairchild
60V P-Channel Logic Level PowerTrench MOSFET
ON Semiconductor
MOSFET P-CH 60V 1.25A SSOT3
Fairchild
FAIRCHILD SEMICONDUCTOR FDN5618P MOSFET Transistor, P Channel, 1.2A, -60V, 170mohm, -10V, -1.6V
Freescale
MOSFET P-CH 60V 1.25A SSOT3
Fairchild
60V P-Channel Logic Level PowerTrench MOSFET
Fairchild
60V P-Channel Logic Level PowerTrench MOSFET
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