| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.00685 Ω |
| Power Dissipation | 294 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 4645 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 4645pF @25V(Vds) |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 231000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
The FDP083N15A_F102 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and uninterruptible power supplies.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
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