| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 52.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 41 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 357 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2.90 nF |
| Gate Charge | 63.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 52.0 A |
| Rise Time | 175 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Input Power (Max) | 357 W |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 357W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDP52N20 is an N-channel MOSFET produced from Fairchild Semiconductor"s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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FDP52N20 Series 200V 52A 0.049Ω Through Hole N-Channel MOSFET - TO-220-3
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MOSFET N-CH 200V 52A TO-220
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MOSFET N-CH 200V 52A TO-220
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