| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Power Dissipation | 114 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 1510pF @25V(Vds) |
| Input Power (Max) | 114 W |
| Fall Time | 95 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 114000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
The FDP55N06 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 100% Avalanche tested
● 30nC Typical low gate charge
● 60pF Typical low Crss
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