| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0046 Ω |
| Polarity | N-Channel |
| Power Dissipation | 242 mW |
| Threshold Voltage | 2.5 V |
| Input Capacitance | 9.16 nF |
| Gate Charge | 145 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | 60.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 9160pF @15V(Vds) |
| Input Power (Max) | 242 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 242W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 9.9 mm |
| Size-Width | 4.5 mm |
| Size-Height | 15.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDP5800 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protection circuit and uninterruptible power supplies applications.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handing capability
Fairchild
10 Pages / 0.64 MByte
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11 Pages / 0.63 MByte
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1 Pages / 0.14 MByte
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