| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.034 Ω |
| Power Dissipation | 417 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 215 ns |
| Input Capacitance (Ciss) | 2615pF @25V(Vds) |
| Input Power (Max) | 417 W |
| Fall Time | 170 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 417 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
The FDP61N20 is a 200V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
ON Semiconductor
8 Pages / 0.4 MByte
ON Semiconductor
10 Pages / 0.51 MByte
ON Semiconductor
3 Pages / 0.48 MByte
Fairchild
Trans MOSFET N-CH 200V 61A 3Pin(3+Tab) TO-220AB Tube
ON Semiconductor
MOSFET N-CH 200V 61A TO-220
Freescale
MOSFET N-CH 200V 61A TO-220
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