| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 10.5 mΩ |
| Polarity | N-CH |
| Power Dissipation | 65 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 56A |
| Rise Time | 8 ns |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
General Description
●This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP7030BLS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP7030BLS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP7030BL in parallel with a Schottky diode.
●Features
●· 56 A, 30 V. RDS(ON) = 10.5 mW @ VGS = 10 V
● RDS(ON) = 16.5 mW @ VGS = 4.5 V
●· Includes SyncFET Schottky body diode
●· Low gate charge (15nC typical)
●· High performance trench technology for extremely low RDS(ON) and fast switching
●· High power and current handling capability
Fairchild
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Fairchild
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