TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 18.0 A |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 265 mΩ |
Polarity | N-Channel |
Power Dissipation | 38.5 W |
Input Capacitance | 2.86 nF |
Gate Charge | 60.0 nC |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 72.0 A |
Rise Time | 165 ns |
Input Capacitance (Ciss) | 2860pF @25V(Vds) |
Input Power (Max) | 38.5 W |
Fall Time | 90 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 38.5W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.36 mm |
Size-Width | 4.9 mm |
Size-Height | 16.07 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
●Features
●• RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9A
●• Low Gate Charge (Typ. 45 nC)
●• Low Crss (Typ. 25 pF)
●• 100% Avalanche Tested
●Applications
●• LCD/LED/PDP TV
●• Lighting
●• Uninterruptible Power Supply
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