| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 150 V |
| Current Rating | 4.90 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2.05 nF |
| Gate Charge | 29.0 nC |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 4.90 A |
| Rise Time | 4 ns |
| Input Capacitance (Ciss) | 2050pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS2572 is an UltraFET® Trench N-channel MOSFET combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS (ON), low ESR, low total and Miller gate charge. It is ideal for high frequency DC to DC converters, 48V I/P half-bridge/full-bridge, 24V forward and push-pull topologies.
● Low QRR body diode
● Maximized efficiency at high frequencies
● UIS Rated
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9 Pages / 0.25 MByte
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