| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 10.0 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 9.80 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Input Capacitance | 1.34 nF |
| Gate Charge | 22.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 13.0 ns |
| Input Capacitance (Ciss) | 1340pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●ThisN-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
●The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
●Features
●10 A, 30 V. RDS(ON)= 0.0135 W @ VGS= 10 V
● RDS(ON)= 0.0200 W @ VGS= 4.5 V.
●Optimized for use in switching DC/DC converters with PWM controllers.
●Very fastswitching .
●Low gate charge (typical 22nC).
Fairchild
6 Pages / 0.1 MByte
Fairchild
6 Pages / 0.1 MByte
Fairchild
1 Pages / 0.06 MByte
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