| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 10.0 A |
| Case/Package | SOIC-8 |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Input Capacitance | 1.21 nF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 1205pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
General Description
●This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
●Features
●■ 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V
● RDS(ON) = 20 mΩ @ VGS = 4.5 V
●■ Fast switching speed
●■ Low gate charge
●■ High performance trench technology for extremely low RDS(ON)
●■ High power and current handling capability
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