| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | -11.0 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.013 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.4 W |
| Input Capacitance | 4.35 nF |
| Gate Charge | 40.0 nC |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -11.0 A |
| Rise Time | 29.0 ns |
| Input Capacitance (Ciss) | 4350pF @20V(Vds) |
| Input Power (Max) | 1.2 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.4W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.575 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDS4675 is a P-channel MOSFET produced using rugged gate version of Fairchild Semiconductor"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (4.5 to 20V). It is suitable for load switch and battery protection application.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High current and power handling capability
Fairchild
5 Pages / 0.27 MByte
Fairchild
7 Pages / 0.16 MByte
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5 Pages / 0.06 MByte
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1 Pages / 0.14 MByte
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