| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -11.0 A |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 14 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Input Capacitance | 3.00 nF |
| Gate Charge | 30.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 3000pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 100 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS6675 is a single P-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for load switching, battery charging circuits and DC-to-DC conversion.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 30nC Typical low gate charge
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