TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0045 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.5 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Breakdown Voltage (Gate to Source) | ±16.0 V |
Continuous Drain Current (Ids) | 14.5 A |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 2510pF @15V(Vds) |
Input Power (Max) | 1 W |
Fall Time | 29 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
●Features
●• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V
● RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
●• Includes SyncFET Schottky body diode
●• Low gate charge (45nC typical)
●• High performance trench technology for extremely low RDS(ON)and fast switching
●• High power and current handling capability
●• RoHS Compliant
Fairchild
10 Pages / 0.24 MByte
Fairchild
10 Pages / 0.24 MByte
Fairchild
Trans MOSFET N-CH 30V 14.5A 8Pin SOIC
Fairchild
FAIRCHILD SEMICONDUCTOR FDS6676AS MOSFET Transistor, N Channel + Schottky, 14.5A, 30V, 0.0045Ω, 10V, 1.5V
ON Semiconductor
MOSFET N-CH 30V 14.5A 8-SOIC
Fairchild
Trans MOSFET N-CH 30V 14.5A 8Pin SOIC N T/R
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