| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0073 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 3939pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The FDS6679 is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers and battery chargers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
ON Semiconductor
4 Pages / 0.09 MByte
ON Semiconductor
8 Pages / 0.53 MByte
ON Semiconductor
5 Pages / 0.58 MByte
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