TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SO-8 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 11 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Breakdown Voltage (Gate to Source) | 10.0 V |
Continuous Drain Current (Ids) | 11.5 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 2010pF @15V(Vds) |
Fall Time | 14 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
30V N-Channel Power Trench Sync FET General Description The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications • DC/DC converter • Motor drives Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
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