| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0036 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.4 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 3610pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 38 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild"s monolithic SyncFET™ technology.
● High performance Trench technology for extremely low RDS (ON) and fast switching
● High power and current handling capability
● 100% RG (gate resistance) tested
ON Semiconductor
8 Pages / 1.17 MByte
Fairchild
Trans MOSFET N-CH 30V 21A 8Pin SOIC N T/R
ON Semiconductor
MOSFET N-CH 30V 21A 8SOIC
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