| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -6.00 A |
| Case/Package | SOIC-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.024 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Input Capacitance | 2.25 nF |
| Gate Charge | 23.0 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | -6.00 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 2250pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS6875 is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±8V Gate to source voltage
● -6A Continuous drain current
● -20A Pulsed drain current
Fairchild
8 Pages / 0.16 MByte
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7 Pages / 0.15 MByte
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5 Pages / 0.06 MByte
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