| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.032 Ω |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 460pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The FDS6930A is a dual N-channel logic level MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● 5.5A Continuous drain current
● 20A Pulsed drain current
ON Semiconductor
7 Pages / 0.17 MByte
ON Semiconductor
5 Pages / 0.06 MByte
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