| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 5.50 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.031 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.9 V |
| Input Capacitance | 412 pF |
| Gate Charge | 3.80 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 5.50 A |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 412pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS6930B is a dual N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Fast switching speed
● Low gate charge
● High performance trench technology for extremely low RDS (ON)
● High power and current handling capability
● -55 to 150°C Junction and storage temperature range
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