| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0081 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.7 V |
| Input Capacitance | 1228 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 5.6 ns |
| Input Capacitance (Ciss) | 1940pF @50V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 4.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4 mm |
| Size-Width | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDS86140 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handing capability in a widely used surface-mount package
● 100% UIL tested
ON Semiconductor
6 Pages / 0.24 MByte
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