| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO-8 |
| Drain to Source Resistance (on) (Rds) | 4.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Input Capacitance (Ciss) | 6925pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●This N-Channel MOSFET isproduced using Fairchild Semiconductor’s advanced PowerTrench® process that has
●been especially tailored to minimize the on-state resistance.
●Features
●Max rDS(on) =4.0mΩat VGS = 10V, ID= 20A
●Max rDS(on) =4.9mΩat VGS = 4.5V, ID=18A
●HBM ESD protection level of 6.4kV typical (note 3)
●High performance trench technology for extremely low rDS(on)
●High power and current handling capability
●RoHS compliant
Fairchild
6 Pages / 0.36 MByte
Fairchild
6 Pages / 0.45 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
Trans MOSFET N-CH 30V 20A 8Pin SOIC N T/R
ON Semiconductor
MOSFET N-CH 30V 20A 8-SOIC
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