TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0054 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Continuous Drain Current (Ids) | 15.0 A |
Rise Time | 13 ns |
Input Capacitance (Ciss) | 2400pF @15V(Vds) |
Input Power (Max) | 1 W |
Fall Time | 7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS8817NZ is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 3.8kV Typical HBM ESD protection level
Fairchild
6 Pages / 0.29 MByte
Fairchild
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Fairchild
4 Pages / 0.17 MByte
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27 Pages / 1.02 MByte
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1 Pages / 0.14 MByte
Fairchild
Trans MOSFET N-CH 30V 15A 8Pin SOIC N T/R
ON Semiconductor
Trans MOSFET N-CH 30V 15A 8Pin SOIC N T/R
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