| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.047 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 31 W |
| Threshold Voltage | 3.1 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 3.5A |
| Input Capacitance (Ciss) | 398pF @50V(Vds) |
| Input Power (Max) | 1.6 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 31 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4 mm |
| Size-Width | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
● ±20V Gate to source voltage
● 3.5A Continuous drain current
● 18A Pulsed drain current
Fairchild
7 Pages / 0.32 MByte
Fairchild
8 Pages / 0.35 MByte
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4 Pages / 0.17 MByte
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