TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.021 Ω |
Power Dissipation | 2 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 30 V |
Input Capacitance (Ciss) | 540pF @15V(Vds) |
Input Power (Max) | 900 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.6 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.575 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS8958B is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. It is suitable for use with DC-to-DC converter, BLU and motor drive inverter applications.
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