| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 7.00 A |
| Case/Package | SOIC-8 |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2 W |
| Input Capacitance | 528 pF |
| Gate Charge | 9.60 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | ±30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 13.0 ns |
| Input Capacitance (Ciss) | 575pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Power Dissipation (Max) | 900 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
●These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
●Features
●■ Q1: N-Channel
● 7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V
● RDS(on) = 0.044Ω @ VGS = 4.5V
●■ Q2: P-Channel
● -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V
● RDS(on) = 0.080Ω @ VGS = -4.5V
●■ Fast switching speed
●■ High power and handling capability in a widely used surface mount package
Fairchild
11 Pages / 0.17 MByte
Fairchild
8 Pages / 0.65 MByte
Fairchild
Trans MOSFET N/P-CH 30V 7A/5A 8Pin SOIC N T/R
ON Semiconductor
Trans MOSFET N/P-CH 30V 7A/5A 8Pin SOIC N T/R
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