| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 635pF @15V(Vds) |
| Input Power (Max) | 1.6 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS8984 is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
● Low gate charge
● ±20V Gate to source voltage
● 7A Continuous drain current
● 30A Pulsed drain current
ON Semiconductor
11 Pages / 0.15 MByte
ON Semiconductor
8 Pages / 0.84 MByte
ON Semiconductor
5 Pages / 0.58 MByte
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