| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.50 A |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 130 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Input Capacitance | 405 pF |
| Gate Charge | 6.00 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | -3.50 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 405pF @10V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS9431A is a 2.5V specified P-channel MOSFET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is suitable for DC-to-DC converter, load switch and battery protection.
● Fast switching speed
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
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P-Channel 2.5V Specified MOSFET
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