| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 6.50 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Input Capacitance | 955 pF |
| Gate Charge | 8.70 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | ±20.0 V |
| Breakdown Voltage (Gate to Source) | ±10.0 V |
| Continuous Drain Current (Ids) | 6.50 A |
| Rise Time | 9.00 ns |
| Input Capacitance (Ciss) | 650pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.575 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDS9934C is a dual N/P-channel enhancement-mode Power FET produced using advanced PowerTrench process. It is especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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8 Pages / 0.15 MByte
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1 Pages / 0.06 MByte
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