TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.082 Ω |
Polarity | Dual P-Channel |
Power Dissipation | 2 W |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | -2.90 A |
Rise Time | 3 ns |
Input Capacitance (Ciss) | 1020pF @30V(Vds) |
Input Power (Max) | 900 mW |
Fall Time | 6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.575 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS9958 is a PowerTrench® dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for portable electronics applications like load switching and power management, battery charging and protection circuits.
● ±20V Gate to source voltage
● -2.9A Continuous drain current
● -12A Pulsed drain current
Fairchild
6 Pages / 0.33 MByte
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8 Pages / 0.32 MByte
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1 Pages / 0.06 MByte
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