| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 3.70 A |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 120 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3 W |
| Threshold Voltage | 2.5 V |
| Input Capacitance | 632 pF |
| Gate Charge | 14.0 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 10.2 A |
| Rise Time | 2 ns |
| Input Capacitance (Ciss) | 632pF @50V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 4.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.56 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDT3612 is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
● 14nC Typical low gate charge
Fairchild
6 Pages / 0.24 MByte
Fairchild
17 Pages / 1.1 MByte
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1 Pages / 0.06 MByte
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